Strain relaxation mechanism in a reverse compositionally graded SiGe heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2472135
Reference22 articles.
1. Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x
2. Artificial GeSi substrates for heteroepitaxy: Achievements and problems
3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
4. Dislocations and strain relief in compositionally graded layers
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