Excitonic luminescence of iodine-intercalated HfS2

Author:

Zawadzka N.1ORCID,Woźniak T.2ORCID,Strawski M.3ORCID,Antoniazzi I.1ORCID,Grzeszczyk M.1ORCID,Olkowska-Pucko K.1ORCID,Muhammad Z.4ORCID,Ibanez J.5ORCID,Zhao W.4ORCID,Jadczak J.6ORCID,Stępniewski R.1ORCID,Babiński A.1ORCID,Molas M. R.1ORCID

Affiliation:

1. Institute of Experimental Physics, Faculty of Physics, University of Warsaw 1 , ul. Pasteura 5, 02-093 Warszawa, Poland

2. Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology 2 , Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

3. Laboratory of Electrochemistry, Faculty of Chemistry, University of Warsaw 3 , ul. Pasteura 1, 02-093 Warszawa, Poland

4. Hefei Innovation Research Institute, School of Microelectronics, Beihang University 4 , Hefei 230013, People's Republic of China

5. Geosciences Barcelona (GEO3BCN), CSIC, Lluís Solé i Sabarís s.n 5 ., Catalonia, 08028 Barcelona, Spain

6. Department of Experimental Physics, Wrocław University of Science and Technology 6 , Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Abstract

Photoluminescence from bulk HfS2 grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4–1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to the recombination of excitons bound to iodine (I2) molecules intercalated between layers of HfS2. The I2 molecules are introduced to the crystal during the growth as halogen transport agents in the growth process. Their presence in the crystal is confirmed by secondary ion mass spectroscopy.

Funder

Narodowe Centrum Nauki

National Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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