Co∕Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2838754
Reference9 articles.
1. Spin Torque and Field-Driven Perpendicular MRAM Designs Scalable to Multi-Gb/Chip Capacity
2. Switching field variation in patterned submicron magnetic film elements
3. Magnetoresistance behavior of a magnetic tunnel junction with perpendicularly magnetized Co∕Pd multilayers
4. Switching characteristics of submicrometer magnetic tunnel junction devices with perpendicular anisotropy
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