Perpendicular magnetic anisotropy in permalloy ultrathin film grown on RuO2(101) surface

Author:

Wu Yunzhuo1ORCID,Cui Yongwei1ORCID,Wu Tong1,Pei Ke2,Chen Haoran1,Xu Hongyue1ORCID,Qin Wentao1,Ma Tianping3ORCID,Che Renchao24ORCID,Yuan Zhe5ORCID,Wu Yizheng167ORCID

Affiliation:

1. Department of Physics and State Key Laboratory of Surface Physics, Fudan University 1 , Shanghai 200433, China

2. Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University 2 , Shanghai 200438, China

3. Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University 3 , Hefei 230601, China

4. Zhejiang Laboratory 4 , Hangzhou 311100, People's Republic of China

5. Institute for Nanoelectronic Devices and Quantum Computing, Fudan University 5 , Shanghai 200433, China

6. Shanghai Research Center for Quantum Sciences 6 , Shanghai 201315, China

7. Shanghai Key Laboratory of Metasurfaces for Light Manipulation, Fudan University 7 , Shanghai 200433, China

Abstract

Permalloy (Py) films are commonly regarded as soft magnetic materials, wherein the magnetization aligns within the film plane. Our studies reveal the presence of perpendicular magnetic anisotropy in Py thin films deposited on the collinear antiferromagnetic RuO2(101) surface. By employing both the magneto-optical Kerr effect and the anomalous Hall effect, we identified the interfacial origin of the observed perpendicular anisotropy, quantifying it with an interfacial anisotropy energy of approximately 0.77 erg/cm2. Current-induced magnetization switching in Py/RuO2(101) has been achieved under an in-plane field, with the current applied along both [010] and [10 1¯] directions. Py films exhibiting perpendicular magnetic anisotropy offer an innovative material platform for investigating the spin–orbit effect, holding significant potential for spintronics applications.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shanghai Municipal Science and Technology Major Project

Shanghai Municipal Science and Technology Basic Research Project

Ministry of Science and Technology of China

Postdoctoral Science Foundation of Shanghai Municipality

Publisher

AIP Publishing

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Perpendicular magnetization switching of RuO2(1 0 0)/[Pt/Co/Pt] multilayers;Journal of Magnetism and Magnetic Materials;2024-09

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