Pressure-induced ionic–polaronic–ionic transition in LaAlO3
Author:
Affiliation:
1. State Key Laboratory of Superhard Materials, Institute of Physics, Jilin University 1 , Changchun 130012, China
2. International Center of Computational Method and Software, Jilin University 2 , Changchun 130012, China
Abstract
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0155704/18017793/262101_1_5.0155704.pdf
Reference40 articles.
1. Low‐loss substrate for microwave application of high‐temperature superconductor films
2. On the anisotropy of dielectric permittivity in single crystal lanthanum aluminate substrates
3. Low‐temperature dielectric properties of candidate substrates for high‐temperature superconductors: LaAlO3and ZrO2: 9.5 mol % Y2O3
4. Characteristics of LaAlO3/Si(100) deposited under various oxygen pressures
5. Shift of indirect to direct bandgap and optical response of LaAlO3 under pressure
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