Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers-Reference-Cited by-同舟云学术

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Effect of exciton transfer on recombination dynamics in vertically nonuniform GaAsSb epilayers

Published:2019-06-24 Issue:25 Volume:114 Page:252101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Bin¹²,Qiu Weiyang¹,Chen Shula³,Chen Pingping¹,Chen Weimin M³^ORCID,Buyanova Irina A.³^ORCID,Wang Xingjun¹^ORCID

Affiliation:

1. State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Department of Physics, Chemistry and Biology, Linköping University, Linköping S-581 83, Sweden

Funder

National Natural Science Foundation of China

China Scholarship Council

Natural Science Foundation of Shanghai

Shanghai Science and Technology Development Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5105343

Reference29 articles.

1. Temperature dependence of the band gap of GaAsSb epilayers

2. Raman and photoluminescence spectra of GaAs1−xSbx

3. light emitting diodes

4. GaAsSb: a novel material for near infrared photodetectors on GaAs substrates

5. High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

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1. Effect of Rapid Thermal Annealing on the Emission Properties in InGaAsSb/AlGaAsSb Multiple Quantum Wells;physica status solidi (RRL) – Rapid Research Letters;2021-05-02

2. Self-induced antimony compositional variation GaAs/Ga(As)Sb core-shell nanowires by molecular beam epitaxy;Journal of Physics: Conference Series;2021-05-01

3. Investigation of localized state emissions in quaternary InGaAsSb/AlGaAsSb multiple quantum wells grown by molecular beam epitaxy;Optical Materials Express;2020-11-23

4. Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As;Journal of Physics D: Applied Physics;2020-11-09

5. Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation;physica status solidi (RRL) – Rapid Research Letters;2020-04-15

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