Cross‐sectional transmission electron microscope study of residual defects in BF+2‐implanted (001)Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337722
Reference22 articles.
1. Industrial Ion Implantation Machines
2. Boron, fluorine, and carrier profiles for B and BF2implants into crystalline and amorphous Si
3. The behaviour of boron molecular ion implants into silicon
4. Damage Effects in Boron and BF 2 Ion‐Implanted p+‐n Junctions in Silicon
5. Sheet resistivity and transmission electron microscope investigations of BF+2‐implanted silicon
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