Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2749439
Reference16 articles.
1. MEMS-based hydrogen gas sensors
2. Hydrogen sensitive mos-structures
3. Hydrogen sensitive mos-structures part 2: characterization
4. Sensing properties of palladium-gate MOS (Pd-MOS) hydrogen sensor-based on plasma grown silicon dioxide
5. The influence of CO on the response of hydrogen sensitive Pd-MOS devices
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