Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric
Author:
Affiliation:
1. Integrated Nanotechnology Lab, Electrical Engineering, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Funder
KAUST OCRF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927913
Reference39 articles.
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2. M. Ohadi and J. Qi , presented at the Annu. IEEE Semicond. Therm. Meas. Manage. Symp. (2004), pp. 231–240.
3. High temperature characterization of PZT(0.52/0.48) thin-film pressure sensors
4. Investigation of Pt/Pb(Zr0.2Ti0.8)O3/Ti-Al-O/Si heterostructure as metal/ferroelectric/insulator/semiconductor
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