Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3176964
Reference32 articles.
1. Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
2. Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting
3. Electronic and Optical Properties of ${\rm a}$- and ${\rm m}$-Plane Wurtzite InGaN–GaN Quantum Wells
4. Optical anisotropy in ultraviolet InGaN∕GaN quantum-well light-emitting diodes with a general crystal orientation
5. Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates
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