Megabit bubble memory process using a new type resin and TaMo alloy‐Au conductor-Reference-Cited by-同舟云学术

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Megabit bubble memory process using a new type resin and TaMo alloy‐Au conductor

Published:1981-03 Issue:3 Volume:52 Page:2395-2397
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Majima T.¹,Hirano A.¹,Orihara S.¹

Affiliation:

1. Fujitsu Laboratories Ltd., Kawasaki, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference5 articles.

1. Y. Sugita, H. Nishida, H. Umezaki, N. Tsumita, and H. Yamada, ICMB‐3 (1979).

2. P. K. George, H. S. Gill, and R. H. Norton, Intermag conf., 1980.

3. S. Takeda, M. Nakajima, T. Kitakoji, H. Okuyama, and K. Murakawa, Extended Abstracts of ECS 158th Meeting vol. 80‐2 (1980).

4. S. Orihara, R. Kinoshita, T. Yanase, M. Segawa, S. Matsuyama, and K. Yamagishi, J. Appl. Phys., vol. 49, 1930 (1978).JAPIAU0021-8979

5. T. Yanase, H. Inoue, S. Iwasa, S. Orihara, and S. Matsuyama, 3M conf., (1980).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and fabrication of a 4Mbit bubble memory chip with 4 µm period permalloy propagation tracks;IEEE Transactions on Magnetics;1984-09

2. Design and characteristics of 4 µm period ion-implanted bubble devices with major line block replicate gate;IEEE Transactions on Magnetics;1983-09

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