Operation mechanism of high performance organic permeable base transistors with an insulated and perforated base electrode-Reference-Cited by-同舟云学术

Operation mechanism of high performance organic permeable base transistors with an insulated and perforated base electrode

Published:2016-09-07 Issue:9 Volume:120 Page:094501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kaschura Felix¹²,Fischer Axel¹,Klinger Markus P.¹,Doan Duy Hai³,Koprucki Thomas³^ORCID,Glitzky Annegret³,Kasemann Daniel¹,Widmer Johannes¹^ORCID,Leo Karl¹²

Affiliation:

1. Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, TU Dresden, 01069 Dresden, Germany

2. Center for Advancing Electronics Dresden (cfAED), TU Dresden, 01069 Dresden, Germany

3. Weierstrass Institute, Mohrenstr. 39, 10117 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Einstein Stiftung Berlin (Einstein Foundation Berlin)

Canadian Institute for Advanced Research (CIFAR)

Seventh Framework Programme (FP7)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962009

Reference24 articles.

1. Vertical organic transistors

2. Bidirectional operation of vertical organic triodes

3. Controlling morphology: A vertical organic transistor with a self-structured permeable base using the bottom electrode as seed layer

4. A new architecture for polymer transistors

5. Fullerene-based polymer grid triodes

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