New and accurate technique for determination of orientation of the straight edges of single‐crystal wafers
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1139678
Reference3 articles.
1. TAILLESS X‐RAY SINGLE‐CRYSTAL REFLECTION CURVES OBTAINED BY MULTIPLE REFLECTION
2. High resolution X-ray diffraction study of defect structures produced by high d.c. electric fields in silicon single crystals
3. Characterization of nearly perfect alkali halide crystals by high resolution diffuse x-ray scattering measurements
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