Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy

Published:2014-12-07 Issue:21 Volume:116 Page:213101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Aho A.¹,Korpijärvi V.-M.¹,Tukiainen A.¹,Puustinen J.¹,Guina M.¹

Affiliation:

1. Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere, Finland

Funder

Finnish Foundation for Technology and Promotion

Graduate School in Electronics, Telecommunications and automation

WÃ¤rtsilÃ¤ Foundation

Tekes (Finnish Funding Agency for Innovation)

Ulla Tuomisen Säätiö (Ulla Tuominen Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903318

Reference26 articles.

1. MBE of dilute-nitride optoelectronic devices

2. Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning

3. High-power disk lasers based on dilute nitride heterostructures

4. 43.5% efficient lattice matched solar cells

5. Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells

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1. Preparation of a Three-Dimensional Composite Structure Based on a Periodic Au@Ag Core–Shell Nanocube with Ultrasensitive Surface-Enhanced Raman Scattering for Rapid Detection;ACS Applied Materials & Interfaces;2023-06-05

2. Optimized molecular beam epitaxy process for lattice-matched narrow-bandgap (0.8 eV) GaInNAsSb solar junctions;Solar Energy Materials and Solar Cells;2022-12

3. Solar Energy in Space Applications: Review and Technology Perspectives;Advanced Energy Materials;2022-06-22

4. Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering;Nature Photonics;2021-04-08

5. Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs;Solar Energy Materials and Solar Cells;2019-06

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