In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126544
Reference21 articles.
1. W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
2. Novel AlInAs/InP HEMT
3. OMCVD-grown In/sub 0.4/Al/sub 0.6/As/InP quantum-well HEMT
4. A recessed-gate InAlAs/n/sup +/-InP HFET with an InP etch-stop layer
5. Velocity‐field characteristics of Ga1−xInxP1−yAsyquaternary alloys
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1. Effect of molecular beam epitaxy growth conditions on phase separation in wide-bandgap InAlAsSb lattice-matched to InP;Journal of Crystal Growth;2020-10
2. Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels;Journal of The Electrochemical Society;2011
3. Optical and electrical characteristics of GaAs/InGaAs quantum-well device;Journal of Alloys and Compounds;2009-03
4. Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor;Sensors and Actuators B: Chemical;2007-03
5. Performance of AlGaAs∕InGaAs∕GaAs Pseudomorphic High Electron Mobility Transistor as a Function of Temperature;Journal of The Electrochemical Society;2007
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