Red and infrared side by side semiconductor quantum well lasers integrated on a GaAs substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122284
Reference7 articles.
1. Monolithic integration of GaAs and In0.2Ga0.8As lasers by molecular beam epitaxy on GaAs
2. InGaAsP closely spaced dual wavelength laser
3. Dual‐wavelength AlGaAs/GaAs laser by selective removal of a quantum well in an asymmetric dual quantum well structure
4. Differential Al–Ga interdiffusion in AlGaAs/GaAs and AlGaInP/GaInP heterostructures
5. Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well
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1. Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors;Applied Physics Letters;2011-06-13
2. Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes;Applied Physics Letters;2010-05-10
3. Magnetoelectric coupling and the hydrogen effect on Ni–PZT–Ni trilayers made by electrodeposition;Smart Materials and Structures;2007-10-23
4. Doping effects from Fe and Ge for Mn in La1-xCaxMnO3(x= 0.15-0.6);Journal of Physics D: Applied Physics;2001-04-18
5. Single and tunable dual-wavelength operation of an InGaAs-GaAs ridge waveguide distributed Bragg reflector laser;IEEE Photonics Technology Letters;2000-01
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