Effects of crystallinity and thickness of silicide layer and substrate orientation on the oxidation of NiSi2on silicon

Author:

Huang G. J.,Chen L. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Optical conductivity of Ni1−xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometry;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-09

2. Oxidation Resistance of SPS (Spark Plasma Sintering) Sintered β-FeSi2Bodies at High Temperature;Korean Journal of Materials Research;2007-03-27

3. NiSi salicide technology for scaled CMOS;Microelectronic Engineering;2002-01

4. Transmission electron microscope study of the dry oxidation kinetics of WSi2 on (001)Si and polycrystalline silicon;Journal of Applied Physics;1999-10

5. Silicides and ohmic contacts;Materials Chemistry and Physics;1998-02

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