Effect of annealing in reduced oxygen pressure on the electrical transport properties of epitaxial thin film and bulk (La1−xNdx)0.7Sr0.3MnO3
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372291
Reference20 articles.
1. Giant negative magnetoresistance in perovskitelikeLa2/3Ba1/3MnOxferromagnetic films
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4. Material characteristics of perovskite manganese oxide thin films for bolometric applications
5. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
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