Structural, optical, and electrical properties of bulk single crystals of InAsxSb(1−x) grown by rotatory Bridgman method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1504163
Reference17 articles.
1. OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYS
2. Electrical properties of InAsxSb1−x alloys
3. Molecular beam epitaxial growth and optical properties of InAs1−xSbxin 8–12 μm wavelength range
4. Long‐wavelength InAsSb photoconductors operated at near room temperatures (200–300 K)
5. Intrinsic carrier concentration and effective masses in InAs1−xSbx
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1. Temperature-and Composition-Dependent Band Gap Energy and Electron–Phonon Coupling in InAs1−xSbx Semiconductors Alloys for Infrared Photodetection;Journal of Electronic Materials;2023-06-26
2. Optical study of narrow band gapInAsxSb1−x(x=0, 0.25, 0.5, 0.75, 1) alloys;Physical Review B;2015-05-13
3. Scattering of carriers by charged dislocations in semiconductors;Journal of Applied Physics;2013-04-28
4. Structural, compositional and optical analysis of InAsxSb1−x crystals grown by vertical directional solidification method;Journal of Alloys and Compounds;2013-01
5. Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures;Journal of Physics D: Applied Physics;2012-08-28
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