Ferroelectric control of the perpendicular magnetic anisotropy in PtCoRu/Hf0.5Zr0.5O2 heterostructure-Reference-Cited by-同舟云学术

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Ferroelectric control of the perpendicular magnetic anisotropy in PtCoRu/Hf0.5Zr0.5O2 heterostructure

Published:2021-07-12 Issue:2 Volume:119 Page:022405
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Bao¹,Li Chunlong¹,Hong Peizhen¹,Huo Zongliang¹²³^ORCID

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, 100029 Beijing, China

2. College of Microelectronics, University of Chinese Academy of Sciences, 100049 Beijing, China

3. Yangtze Memory Technologies Co., Ltd. (YMTC), 430205 Wuhan, China

Funder

National Key Research and Development Program of China

National Science and Technology Major Project

The Chinese Academy of Sciences

Youth Innovation Promotion Association, Chinese Academy of Sciences

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0054593

Reference47 articles.

1. Anatomy of spin-transfer torque

2. Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions

3. Spin-torque building blocks

4. Efficient spin transfer torque in La2/3Sr1/3MnO3 nanostructures

5. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect

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1. Optimal parameter space for stabilizing the ferroelectric phase of Hf_0.5Zr_0.5O₂ thin films under strain and electric fields;Chinese Physics B;2024-07-01

2. Hf 0.5Zr0.5O2/Fe65Co35薄膜中电阻开关行为的偏置电压控制;2024

3. Tensile stress regulated microstructures and ferroelectric properties of Hf_0.5Zr_0.5O₂ films;Chinese Physics B;2023-12-01

4. The effect of γ-ray irradiation on voltage-controlled magnetism of HfZrO/CoFeB Hall bar device;Journal of Magnetism and Magnetic Materials;2023-06

5. Doped HfO2-based ferroelectric-aided charge-trapping effect in MFIS gate stack of FeFET;Journal of Applied Physics;2023-04-27

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