Growth kinetics of silicon dioxide on silicon in an inductively coupled rf plasma at constant anodization currents
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351724
Reference35 articles.
1. The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon
2. Comparison of RF and microwave oxidation systems for the growth of thin oxides at low temperatures
3. Constant current versus constant voltage plasma anodization techniques
4. Low-temperature fabrication of MOSFET's Utilizing a microwave-excited plasma oxidation technique
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