Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be‐doped GaAsSb lattice matched to InP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112701
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1. GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage current
2. High gain AllnAs/GaAsSb/AllnAs NpN HBTs on InP
3. OMVPE growth of the metastable III/V alloy GaAs0.5Sb0.5
4. Optical properties of molecular beam epitaxially grown GaAs1−xSbx(0
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