Nonlinear binary indium-tin-oxide terahertz emitters with complete phase and amplitude control

Author:

Feng Xi1,Zhang Xueqian1ORCID,Qiu Haidi1,Xu Quan1ORCID,Zhang Weili2ORCID,Han Jiaguang13ORCID

Affiliation:

1. Center for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, and The Key Laboratory of Optoelectronics Information and Technology (Ministry of Education), Tianjin University 1 , Tianjin 300072, China

2. School of Electrical and Computer Engineering, Oklahoma State University 2 , Stillwater, Oklahoma 74078, USA

3. Guangxi Key Laboratory of Optoelectronic Information Processing, School of Optoelectronic Engineering, Guilin University of Electronic Technology 3 , Guilin 541004, China

Abstract

Terahertz (THz) waves have demonstrated immense potential for various applications in multiple fields. To enable the development of compact THz applications, it is crucial to integrate THz emission and wavefront manipulation into a single device. This study proposes and experiments with a nonlinear binary THz emitter that utilizes a patterned indium-tin-oxide (ITO) film. By precisely controlling the displacements and area sizes of the composed ITO patches, we are able to fully and independently manipulate the phase and amplitude of the locally emitted THz wave at the +1st-order diffraction, so as to the corresponding wavefront. Our innovative approach provides a promising path toward miniaturized and functioning THz devices and systems.

Funder

National Natural Science Foundation of China

the Yunnan Expert Workstation

Publisher

AIP Publishing

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