Improving the radiation hardness of graphene field effect transistors-Reference-Cited by-同舟云学术

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Improving the radiation hardness of graphene field effect transistors

Published:2016-10-10 Issue:15 Volume:109 Page:153108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alexandrou Konstantinos¹,Masurkar Amrita¹,Edrees Hassan¹,Wishart James F.²^ORCID,Hao Yufeng³,Petrone Nicholas³^ORCID,Hone James³,Kymissis Ioannis¹

Affiliation:

1. Department of Electrical Engineering, Columbia University, New York 10027, USA

2. Chemistry Division, Brookhaven National Laboratory, Upton, New York 11973-5000, USA

3. Department of Mechanical Engineering, Columbia University, New York 10027, USA

Funder

National Science Foundation (NSF)

Defense Threat Reduction Agency (DTRA)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4963782

Reference36 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. The rise of graphene

4. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

5. Fine Structure Constant Defines Visual Transparency of Graphene

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