Near-field evidence of local polarized emission centers in InGaN/GaN materials
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3265732
Reference18 articles.
1. Ultraviolet InGaN and GaN Single-Quantum-Well-Structure Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
2. Blue light emitting laser diodes
3. Indium concentration influence on PL spatial inhomogeneity in InGaN single quantum well structures detected by original low-cost near-field probes
4. Observation of optical instabilities in the photoluminescence of InGaN single quantum well
5. Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory
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3. Crystal engineering by tuning the growth kinetics of GaN 3-D microstructures in SAG-HVPE;CrystEngComm;2018
4. Polarization-Resolved Near-Field Spectroscopy of Localized States in m -Plane InxGa1−xN/GaN Quantum Wells;Physical Review Applied;2017-06-30
5. Spontaneous formation of GaN/AlN core–shell nanowires on sapphire by hydride vapor phase epitaxy;Journal of Crystal Growth;2016-11
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