Effects of potential barrier height and its fluctuations at grain boundaries on thermoelectric properties of polycrystalline semiconductors-Reference-Cited by-同舟云学术

Effects of potential barrier height and its fluctuations at grain boundaries on thermoelectric properties of polycrystalline semiconductors

Published:2013-08-07 Issue:5 Volume:114 Page:053707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kajikawa Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4817243

Reference32 articles.

1. Theory of Photoconductivity in Semiconductor Films

2. Effects of interface‐potential nonuniformities on carrier transport across silicon grain boundaries

3. Origin of Curved Arrhenius Plots for the Conductivity of Polycrystalline Semiconductors

4. Conduction model covering non-degenerate through degenerate polycrystalline semiconductors with non-uniform grain-boundary potential heights based on an energy filtering model

5. B. Y. Moizhes and V. Nemchinsky, in Proceedings of the 11th International Conference on Thermoelectrics, Arlington, TX, 1993, edited by K. R. Rao (University of Texas Press, Arlington, TX, 1993), pp. 232–235.

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