Formation of epitaxial CoSi2 spike in Co/Si3N4/Si(100) system and its crystallographic structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121703
Reference11 articles.
1. TiSi2thickness limitations for use with shallow junctions and SWAMI or LOCOS isolation
2. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
3. Effect of Deposition Temperature and Sputtering Ambient on In Situ Cobalt Silicide Formation
4. Characterization of a Self‐Aligned Cobalt Silicide Process
5. Epitaxial growth of CoSi2 layer on (100)Si and facet formation at the CoSi2/Si interface
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