Gain compression in tensile‐strained 1.55 μm quantum well lasers operating at first and second quantized states
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107167
Reference13 articles.
1. Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers
2. Anomalously high damping in strained InGaAs-GaAs single quantum well lasers
3. Well-barrier hole burning in quantum well lasers
4. Effects of carrier transport on high‐speed quantum well lasers
5. Low threshold 1.5 μm tensile-strained single quantum well lasers
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1. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001
2. Optical propeties of In 1-x GaxAs y P 1-y multiple quantum well heterostructure lasers;SPIE Proceedings;2000-12-15
3. Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers;IEEE Journal of Quantum Electronics;1999-04
4. High-Speed Lasers;Semiconductor Lasers I;1999
5. Carrier Transport in InP-Based Lasers, Modulators, and Optical Switching Devices;physica status solidi (b);1997-11
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