Influence of hydrogenation on photoluminescence of GaAlAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359129
Reference10 articles.
1. Effects of different processes with hydrogen on the photoluminescence of GaAlAs:Si grown by molecular beam epitaxy
2. Photoluminescence enhancement in post‐growth hydrogenated Ga1−xAlxAs (0≤x≤0.32) and GaAs/GaAlAs multilayer structures
3. Effect of H2on the Quality of Si-Doped AlxGa1-xAs Grown by MBE
4. Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure
5. Hydrogen passivation of shallow-acceptor impurities inp-type GaAs
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3. The adsorption of Cs and residual gases on Ga0.5Al0.5As (001) β2 (2×4) surface: A first principles research;Applied Surface Science;2014-01
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