Phase separation in GaN/AlGaN quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3242010
Reference18 articles.
1. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
2. From visible to white light emission by GaN quantum dots on Si(111) substrate
3. Progress in GaN-based quantum dots for optoelectronics applications
4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
5. Si-doped AlxGa1−xN(0.56⩽×⩽1) layers grown by molecular beam epitaxy with ammonia
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1. Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells;OSA Continuum;2019-03-18
2. AlN/GaN and InAlN/GaN DBRs;Advances in Imaging and Electron Physics;2019
3. DFT modeling of wurtzite III-nitride ternary alloys;Advances in Imaging and Electron Physics;2019
4. Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth;Journal of Applied Physics;2017-09-14
5. Strain and size combined effects on the GaN band structure: VEELS and DFT study;Physical Chemistry Chemical Physics;2017
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