Temperature dependent simulation of diamond depleted Schottky PIN diodes
Author:
Affiliation:
1. Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-8806, USA
2. Department of Physics, Arizona State University, Tempe, Arizona 85287-8806, USA
Funder
Advanced Research Projects Agency - Energy (ARPA-E)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4953385
Reference29 articles.
1. Extreme dielectric strength in boron doped homoepitaxial diamond
2. Electrical properties of lateral p-n junction diodes fabricated by selective growth of n+diamond
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4. Diamond Junction Field-Effect Transistors with Selectively Grown n$^{+}$-Side Gates
5. Diamond bipolar junction transistor device with phosphorus-doped diamond base layer
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