Recombination, gain, band structure, efficiency, and reliability of 1.5-μm GaInNAsSb/GaAs lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1873035
Reference38 articles.
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3. Monolithic, GaInNAsSb VCSELs at 1.46 [micro sign]m on GaAs by MBE
4. High-performance 1.5 [micro sign]m GaInNAsSb lasers grown on GaAs
5. LEOS Annual Meeting Conference Proceedings;Goddard L.,2004
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