Dielectric relaxation of atomic-layer-deposited HfO2 thin films from 1kHzto5GHz
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1988982
Reference19 articles.
1. Characterization of SiO2/Si(100) interface structure of ultrathin SiO2films using spatially resolved electron energy loss spectroscopy
2. Chemical vapor deposition and characterization of HfO2 films from organo-hafnium compounds
3. Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
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