Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices-Reference-Cited by-同舟云学术

Optical capacitance-voltage characterization of charge traps in the trapping nitride layer of charge trapped flash memory devices

Published:2007-11-26 Issue:22 Volume:91 Page:223511
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Jang Uk.,Roh Kang Seob,Kang Gu Cheol,Seo Seung Hwan,Kim Kwan Young,Lee Sunyeong,Song Kwan Jae,Choi Chang Min,Park So Ra,Park Jun Hyun,Jeon Ki Chan,Kim Dae Hwan,Park Byung-Gook,Lee Jong Duk,Kim Dong Myong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2819092

Reference12 articles.

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5. Proceedings of the IEEE Non-Volatile Memory Technology Symposium;White M. H.,2004

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