Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1323550
Reference7 articles.
1. Effect ofp/iinterface layer on darkJ‐Vcharacteristics andVocinp‐i‐na‐Si solar cells
2. The relation of dark and illuminated diode parameters to the open‐circuit voltage of amorphous siliconp‐i‐nsolar cells
3. Performance and stability of Si:H p–i–n solar cells with i layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary
4. Enhancement of open circuit voltage in high efficiency amorphous silicon alloy solar cells
5. Initial, rapid light‐induced changes in hydrogenated amorphous silicon materials and solar cell structures: The effects of charged defects
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