Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC∕SiO2 interfaces in oxidized porous SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2179128
Reference22 articles.
1. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
2. Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy
3. Nitridation anisotropy in SiO2∕4H–SiC
4. Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps
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