Nitridation of a Si(100) surface by 100–1000 eV N+2 ion beams
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.468194
Reference24 articles.
1. Photoemission study of ammonia dissociation on Si(100) below 700 K
2. Si(100)2 × 1: the clean and ammonia exposed surface studied with high resolution core-level spectroscopy
3. Silicon backbond strain effects on NH3 surface chemistry: Si(111)-(7 × 7) compared to Si(100)-(2 × 1)
4. The reaction of Si(100) 2×1 with NO and NH3: The role of surface dangling bonds
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