Affiliation:
1. Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University 1 , Nanning 530004, China
2. State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, Guangxi University 2 , Nanning 530004, People's Republic of China
Abstract
Traditional surface engineering, as a means of manufacturing triboelectric nanogenerator (TENG), is complex and expensive. The yield of traditional polymer process is low, which leads to the high cost and low stability of traditional TENGs and greatly limits their practical applications. Moreover, it is worth noting that with the miniaturization and integration of electronic devices, generators need to provide higher current in parallel circuits. In this study, we report the performance of the enhanced Cu/P-type GaN TENG contacts in centimeter scale. Considering the high surface mechanical strength and surface structure characteristics of GaN wafers, we propose using molten KOH to etch the Ga polar GaN surface to form more interface electrons and dangling bonds without destroying the surface structure. Our experimental results show that the generator performance has been drastically improved (the short circuit current increases from 9 to 80 μA, and the open circuit voltage increases from 8 to 29 V). The maximum load electric power density of ∼0.28 W/m2 was obtained. We also compared the open circuit current density with the reported different type TENGs based on Schottky contact at the centimeter-level. The Cu/P-type GaN TENGs achieved in this work exhibit excellent open circuit current density of ∼36 μA/cm2. Thus, we provide insight into surface engineering for future generation TENG devices.
Funder
Bagui Talent of Guangxi province
Talent Model Base
National Key Research and Development Program Disinfection Robot Based on High Power AlGaN-based UVLEDs
Guangxi Science and Technology Program
Guangxi University Foundation
China, and Guangxi Science and Technology Base and talent Special project
National Key Research and Development Program
High luminous efficiency and long life DUV LED technology
Subject
Physics and Astronomy (miscellaneous)
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献