Conformal vapor phase growth of submicron thick (100) GaAs films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103000
Reference10 articles.
1. Conformal vapor phase epitaxy
2. Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeur
3. A Novel Crystal Growth Phenomenon: Single Crystal GaAs Overgrowth onto Silicon Dioxide
4. Selective Epitaxial Deposition of Gallium Arsenide in Holes
5. Single‐crystal GaAs films on amorphous substrates by the CLEFT process
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1. Properties of AlGaAs layers grown on Si by the conformal method;Materials Science and Engineering: B;2002-04
2. GaAs-on-silicon conformal vapor-phase epitaxy using reversible transport and selective etching reactions with water vapour;Journal of Crystal Growth;2001-05
3. Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy;Journal of Crystal Growth;1996-07
4. High quality GaAs on Si by conformal growth;Applied Physics Letters;1992-04-27
5. Defect Filtering in GaAs on Si by Conformal Growth;Japanese Journal of Applied Physics;1991-03-15
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