Direct biexciton generation in Si nanocrystal by a single photon

Abstract

It has been shown theoretically that a strong quantum confinement regime in Si nanocrystals promotes highly efficient simultaneous excitation of two electron–hole pairs (biexciton) by a single photon. The rate (inverse lifetime) of biexciton generation has been calculated analytically as a function of the nanocrystal radius. The size-dependence of the rate in Si nanocrystal turns out to be sharp enough—in fact, it is inversely proportional to the sixth power of the radius. At radii values approaching a nanometer, the lifetime of biexciton generation falls into the nanosecond range. The threshold energy of this process in Si nanocrystals is exactly equal to twice the nanocrystal gap in contrast to the case of nanocrystals formed of direct-bandgap semiconductors, where the direct photon-induced creation of a biexciton with such an energy is, in fact, suppressed.