Efficiency droop in InSb/AlInSb quantum-well light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773182
Reference23 articles.
1. Origin of efficiency droop in GaN-based light-emitting diodes
2. Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
3. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
4. Auger recombination in InGaN measured by photoluminescence
5. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
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1. Realization of high detectivity mid-infrared photodiodes based on highly mismatched AlInSb on GaAs substrates;Journal of Applied Physics;2021-02-07
2. Infrared photoreflectance of InSb-based two-dimensional nanostructures;Journal of the Optical Society of America B;2019-03-12
3. FTIR photoreflectance of narrow-gap heterostructures based on AlxIn1-xSb alloys;Journal of Physics: Conference Series;2017-11
4. Design, Simulations, and Optimizations of Mid-infrared Multiple Quantum Well LEDs;Procedia Engineering;2016
5. Determination of InSb/AlInSb quantum well energy spectrum;Journal of Physics: Conference Series;2014-10-27
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