Initial/final state selection of the spin polarization in electron tunneling across an epitaxial Fe∕GaAs(001) interface-Reference-Cited by-同舟云学术

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Initial/final state selection of the spin polarization in electron tunneling across an epitaxial Fe∕GaAs(001) interface

Published:2007-09-03 Issue:10 Volume:91 Page:102114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kurebayashi H.,Steinmuller S. J.,Laloë J. B.,Trypiniotis T.,Easton S.,Ionescu A.,Yates J. R.,Bland J. A. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2783187

Reference14 articles.

1. Semiconductor Spintronics and Quantum Computation

2. Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

3. Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100)

4. Ballistic spin filtering across ferromagnet/semiconductor interfaces at room temperature

5. Highly efficient spin filtering of ballistic electrons

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1. Development of an optically gated Fe/n-GaAs spin-polarized transistor;Physical Review B;2022-10-07

2. Hybrid spintronic materials: Growth, structure and properties;Progress in Materials Science;2019-01

3. Optically Induced and Detected Spin Current;Oxford Scholarship Online;2017-12-21

4. Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves;Scientific Reports;2016-07

5. Spin Conversion at Magnetic Interfaces;Spintronics for Next Generation Innovative Devices;2016-01-08

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