Demonstration of dual gain mechanism in an InGaAs/InAlAs superlattice photodiode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97902
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1. Outlook;Molecular Beam Epitaxy;1996
2. Outlook;Molecular Beam Epitaxy;1989
3. InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μm;Applied Physics Letters;1988-05-02
4. Multilayer APDs producing up to two impact ionisations per carrier per stage: optical receiver performance analysis;IEE Proceedings J Optoelectronics;1988
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