Aluminum‐induced crystallization and counter‐doping of phosphorous‐doped hydrogenated amorphous silicon at low temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362425
Reference24 articles.
1. Solid Solubilities of Impurity Elements in Germanium and Silicon*
2. Interaction betweenn‐type amorphous hydrogenated silicon films and metal electrodes
3. Interfacial reactions between Au and hydrogenated amorphous Si
4. Low‐temperature crystallization of hydrogenated amorphous silicon films in contact with evaporated aluminum electrodes
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