Contact resistance of superconductor‐semiconductor interfaces: The case of Nb‐InAs/AlSb quantum‐well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113047
Reference11 articles.
1. Carrier transport in mesoscopic silicon-coupled superconducting junctions
2. Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations
3. Anomalous Andreev conductance in InAs-AlSb quantum well structures with Nb electrodes
4. Explanation of subharmonic energy gap structure in superconducting contacts
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