Impact of contact resistance on the performances of graphene field-effect transistor through analytical study-Reference-Cited by-同舟云学术

Impact of contact resistance on the performances of graphene field-effect transistor through analytical study

Published:2021-04-01 Issue:4 Volume:11 Page:045220
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Islam Md. Rasidul¹²^ORCID,Shifat A. S. M. Zadid³,Liu Kong¹²^ORCID,Li Qicong¹²,Yang Cheng¹²,Wang Zhijie¹²,Qu Shengchun¹²,Wang Zhanguo¹²

Affiliation:

1. Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

3. Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna 9203, Bangladesh

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China-Guangdong Joint Fund

Key Research Program of Frontier Science, Chinese Academy of Sciences

Youth Innovation Promotion Association

Beijing Nova Program

The Strategic Priority Research Program of the Chinese Academy of Sciences

The World Academy of Sciences Scholarship

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0039622

Reference36 articles.

1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

2. On the performance limits for Si MOSFETs: a theoretical study

3. H. Sun, L. Fang, Y. Wang, Y. Chi, and R. Liu, in Proceedings of 2014 IEEE/ACM International Symposium on Nanoscale Architectures NANOARCH (IEEE, 2014), p. 139.

4. Electric Field Effect in Atomically Thin Carbon Films

5. The rise of graphene

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