High-resolution microbeam x-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

High-resolution microbeam x-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy

Published:2000-08-28 Issue:9 Volume:77 Page:1286-1288
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kimura Shigeru,Kimura Hidekazu,Kobayashi Kenji,Oohira Tomoaki,Izumi Koich,Sakata Yasutaka,Tsusaka Yoshiyuki,Yokoyama Kazushi,Takeda Shingo,Urakawa Masafumi,Kagoshima Yasushi,Matsui Junji

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1290048

Reference10 articles.

1. Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures

2. Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP

3. Low drive voltage (1.5 Vp.p.) and high power DFB-LD/modulator integrated light sources using bandgap energy controlled selective MOVPE

4. A transceiver PIC for bidirectional optical communication fabricated by bandgap energy controlled selective MOVPE

5. All-selective MOVPE-grown 1.3-μm strained multi-quantum-well buried-heterostructure laser diodes

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