Electrical characterization of GaAs metal bonded to Si-Reference-Cited by-同舟云学术

Electrical characterization of GaAs metal bonded to Si

Published:2006-07-03 Issue:1 Volume:89 Page:012106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bickford Justin R.,Qiao D.,Yu P. K. L.,Lau S. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2219980

Reference17 articles.

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3. Ohmic contacts for GaAs devices

4. The specific contact resistance of Pd2Si contacts on n- and p-Si

5. Chemical trends in Schottky barriers: Charge transfer into adsorbate-induced gap states and defects

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