Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories-Reference-Cited by-同舟云学术

Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories

Published:2010-05-10 Issue:19 Volume:96 Page:192106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Chia-Han,Kuo Yue,Lin Chen-Han

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3429590

Reference21 articles.

1. Silicon nanoelectronics for the 21st century

2. Theoretical and experimental investigation of Si nanocrystal memory device with HfO/sub 2/ high-k tunneling dielectric

3. Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-kMemory Device

4. Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics

5. Factors Influencing Characteristics of Hafnium Based High-K Dielectrics

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