Ambipolar spin diffusion in p-type GaAs: A case where spin diffuses more than charge-Reference-Cited by-同舟云学术

Ambipolar spin diffusion in p-type GaAs: A case where spin diffuses more than charge

Published:2017-09-07 Issue:9 Volume:122 Page:095703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cadiz F.¹²,Notot V.¹,Filipovic J.¹^ORCID,Paget D.¹,Weber C. P.³^ORCID,Martinelli L.¹,Rowe A. C. H.¹,Arscott S.⁴^ORCID

Affiliation:

1. Physique de la matière condensée, Ecole Polytechnique, CNRS, Université Paris Saclay, 91128 Palaiseau, France

2. Université de Toulouse, INSA-CNRS-UPS, 31077 Toulouse Cedex, France

3. Department of Physics, Santa Clara University, 500 El Camino Real, Santa Clara, California 95053-0315, USA

4. Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), University of Lille, CNRS, Avenue Poincaré, Cité Scientifique, 59652 Villeneuve d'Ascq, France

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4985831

Reference29 articles.

1. Full Electrical Control of the Electron Spin Relaxation in GaAs Quantum Wells

2. Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs multiple-quantum wells

3. Spin-Hall effect and spin-Coulomb drag in doped semiconductors

4. Spin Hall effect devices

5. Lateral drag of spin coherence in gallium arsenide

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Direct comparison of three-terminal and four-terminal Hanle effects in the persistent photoconductor Al0.3Ga0.7As:Si;Physical Review Materials;2022-02-25

2. Le spin des électrons se transporte-t-il comme leur charge ?;Reflets de la physique;2020-04

3. Photovoltage-induced blockade of charge and spin diffusion in semiconducting thin films;Journal of Applied Physics;2019-07-14